A simulation study of metal-oxide-semiconductor field-effect transistor with Silicon-based Schottky Barrier contacts for source and drain ( SBSD-MOSFET) is presented in this paper. 本文对硅基肖特基源漏MOSFET(简称SBSD-MOSFET)进行模拟研究。
The transistor can be regarded as two back-to-back Schottky barrier diodes. 根据其结构特点,我们可以将其看作是两个背靠背的肖特基二极管。
A Schottky gate resonant tunneling transistor ( RTT) is fabricated. The gate is formed by electroplating Pt/ Au onto the side of an double barrier structure. 已研制成了肖特基栅共振隧穿晶体管,在双势垒结构上蒸发铂金形成栅。